d a t a sh eet product speci?cation supersedes data of 2001 apr 04 2001 may 18 discrete semiconductors BAP63-02 silicon pin diode m3d319
2001 may 18 2 philips semiconductors product speci?cation silicon pin diode BAP63-02 features high speed switching for rf signals low diode capacitance low diode forward resistance very low series inductance for applications up to 3 ghz. applications rf attenuators and switches. description planar pin diode in a sod523 ultra small smd plastic package. pinning pin description 1 cathode 2 anode marking code: k5. fig.1 simplified outline (sod523) and symbol. handbook, halfpage 12 top view mam405 limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min. max. unit v r continuous reverse voltage - 50 v i f continuous forward current - 100 ma p tot total power dissipation t s 90 c - 715 mw t stg storage temperature - 65 +150 c t j junction temperature - 65 +150 c
2001 may 18 3 philips semiconductors product speci?cation silicon pin diode BAP63-02 electrical characteristics t j = 25 c unless otherwise speci?ed. note 1. guaranteed on aql basis: inspection level s4, aql 1.0. thermal characteristics symbol parameter conditions typ. max. unit v f forward voltage i f = 50 ma 0.95 1.1 v i r reverse leakage current v r =35v - 10 na c d diode capacitance v r = 0; f = 1 mhz 0.36 - pf v r = 1 v; f = 1 mhz 0.32 - pf v r = 20 v; f = 1 mhz 0.25 0.32 pf r d diode forward resistance i f = 0.5 ma; f = 100 mhz; note 1 2.5 3.5 w i f = 1 ma; f = 100 mhz; note 1 1.95 3 w i f = 10 ma; f = 100 mhz; note 1 1.17 1.8 w i f = 100 ma; f = 100 mhz; note 1 0.9 1.5 w | s 21 | 2 isolation v r = 0; f = 900 mhz 15.6 - db v r = 0; f = 1800 mhz 10.3 - db v r = 0; f = 2450 mhz 8.3 - db | s 21 | 2 insertion loss i f = 0.5 ma; f = 900 mhz 0.19 - db i f = 0.5 ma; f = 1800 mhz 0.24 - db i f = 0.5 ma; f = 2450 mhz 0.28 - db | s 21 | 2 insertion loss i f = 1 ma; f = 900 mhz 0.16 - db i f = 1 ma; f = 1800 mhz 0.20 - db i f = 1 ma; f = 2450 mhz 0.25 - db | s 21 | 2 insertion loss i f = 10 ma; f = 900 mhz 0.10 - db i f = 10 ma; f = 1800 mhz 0.16 - db i f = 10 ma; f = 2450 mhz 0.20 - db | s 21 | 2 insertion loss i f = 100 ma; f = 900 mhz 0.09 - db i f = 100 ma; f = 1800 mhz 0.14 - db i f = 100 ma; f = 2450 mhz 0.18 - db t l charge carrier life time when switched from i f =10mato i r = 6 ma; r l = 100 w ; measured at i r =3ma 310 - ns l s series inductance i f = 100 ma; f = 100 mhz 0.6 - nh symbol parameter value unit r th j-s thermal resistance from junction to soldering point 85 k/w
2001 may 18 4 philips semiconductors product speci?cation silicon pin diode BAP63-02 graphical data handbook, halfpage 10 1 10 - 1 mgw126 10 - 1 110 i f (ma) r d ( w ) 10 2 fig.2 forward resistance as a function of forward current; typical values. f = 100 mhz; t j =25 c. handbook, halfpage 020 400 0 100 mgw127 200 300 4 8 12 16 v r (v) c d (ff) fig.3 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j =25 c. handbook, halfpage 0123 0 - 0.1 - 0.3 - 0.5 - 0.4 - 0.2 mgw128 f (ghz) | s 21 | 2 (db) (1) (2) (3) (4) fig.4 insertion loss ( | s 21 | 2 ) of the diode in on-state as a function of frequency; typical values. diode inserted in series with a 50 w stripline circuit and biased via the analyzer tee network. t amb =25 c. (3) i f = 1 ma. (4) i f =0.5ma. (1) i f = 100 ma. (2) i f =10ma. handbook, halfpage 0123 0 - 10 - 30 - 40 - 20 mgw129 f (ghz) | s 21 | 2 (db) fig.5 isolation ( | s 21 | 2 ) of the diode in off-state as a function of frequency; typical values. diode zero biased and inserted in series with a 50 w stripline circuit. t amb =25 c.
2001 may 18 5 philips semiconductors product speci?cation silicon pin diode BAP63-02 package outline references outline version european projection issue date iec jedec eiaj sod523 sc-79 98-11-25 plastic surface mounted package; 2 leads sod523 0 0.5 1 mm scale d 12 h e e b p a c v m a a unit b p cd e v mm 0.35 0.25 0.2 0.1 0.15 0.9 0.7 1.3 1.1 a 0.7 0.5 h e 1.7 1.5 dimensions (mm are the original dimensions) note 1. the marking bar indicates the cathode. (1)
2001 may 18 6 philips semiconductors product speci?cation silicon pin diode BAP63-02 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. data sheet status (1) product status (2) definitions objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 may 18 7 philips semiconductors product speci?cation silicon pin diode BAP63-02 notes
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